5/27/2019 0 Comments Analogi Tranzistora K2645Came from a Persian word meaning 'Carrier of Kings'. Foljksvagen sharan rukovodstvo po ekspluatacii skachatj besplatno. Excludes: US Protectorates, APO/FPO, Gibraltar, Latvia, Brazil, Chile, Peru, Angola, Benin, Burkina Faso, Burundi, Cameroon, Central African Republic, Chad, Comoros, Congo, Democratic Republic of the, Congo, Republic of the, C么te d'Ivoire (Ivory Coast), Djibouti, Equatorial Guinea, Eritrea, Ethiopia, Gabon Republic, Gambia, Ghana, Guinea, Guinea-Bissau, Lesotho, Liberia, Libya, Malawi, Mali, Mauritania, Mayotte, Niger, Rwanda, Saint Helena, Senegal, Seychelles, Sierra Leone, Somalia, Swaziland, Togo, Uganda, Western Sahara, Zambia, Zimbabwe, PO Box. LM324 Datasheet, LM324 PDF, LM324 Data sheet, LM324 manual, LM324 pdf, LM324, datenblatt, Electronics LM324, alldatasheet, free, datasheet, Datasheets, data sheet. MOSFET Cross-Reference Search 2SK2843 Datasheet (PDF) 1.1. Size:411K _toshiba 2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.54? (typ.) (ON) High forward transfer admittance:|Y| = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.1. Size:408K _toshiba 2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 4.2? (typ.) (ON) High forward transfer admittance:|Y| = 1.7 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 4.2. Size:417K _toshiba 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance:|Yfs| = 8.0 S (typ.) Low leakage current: IDSS = 100?A (max) (VDS = 400 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 4.3. Size:426K _toshiba 2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance: R = 16 m? (typ.) DS (ON) High forward transfer admittance:|Y| = 26 S (typ.) fs Low leakage current: IDSS = 100 µA (max) (V = 30 V) DS Enhancement-mod 4.4. Size:411K _toshiba 2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 8.0? (typ.) High forward transfer admittance:|Y| = 0.9 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.5. Size:425K _toshiba 2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.4? (typ.) (ON) High forward transfer admittance:|Y| = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.6. Size:411K _toshiba 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 1.1? (typ.) (ON) High forward transfer admittance:|Y| = 7.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) 4.7.
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